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1N5817RL

  

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ON-Semiconductor
ON Semiconductor
1N5817RL SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

 


other parts : 1N5817  1N5817G  1N5817RLG  1N5818  1N5818G  1N5818RL  1N5818RLG  1N5819  1N5819G  1N5819RL  
1N5817RL PDF
ST-Microelectronics
STMicroelectronics
1N5817RL Schottky Barrier Rectifiers 1N5817RL PDF
ON-Semiconductor
ON Semiconductor
1N5817RLG SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

 


other parts : 1N5817  1N5817G  1N5817RL  1N5818  1N5818G  1N5818RL  1N5818RLG  1N5819  1N5819G  1N5819RL  
1N5817RLG PDF

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