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2SD2114SV

  

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ROHM
ROHM Semiconductor
2SD2114SV High-current Gain Medium Power Transistor (20V, 0.5A)

Features
1) High DC current gain. hFE= 1200 (Typ.)
2) High emitter-base voltage. VEBO=12V (Min.)
3) Low VCE (sat). VCE (sat)= 0.18V (Typ.)
(IC/ IB= 500mA / 20mA)

Structure
Epitaxial planar type
NPN silicon transistor


other parts : 2SD2114KS  2SD2114KU  2SD2114S  2SD2114SU  2SD2114SW  D2114S  
2SD2114SV PDF

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