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4N29A

  

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NJSEMI
New Jersey Semiconductor
4N29A Photon Coupled Isolator

FEATURES:
• High DC current transfer ratio
• High isolation resistance
• 2500 volts isolation voltage
• I/O compatible with integrated circuits


other parts : 4N29  4N30  4N31  4N32  4N32A  4N33  
4N29A PDF
Motorola
Motorola => Freescale
4N29A 6-Pin DIP Optoisolators Darlington Output

The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.
This series is designed for use in applications requiring high collector output currents at lower input currents.

• Higher Sensitivity to Low Input Drive Current
• Meets or Exceeds All JEDEC Registered Specifications
• To order devices that are tested and marked per VDE 0884


other parts : 4N29  4N29AV  4N29V  4N30  4N30V  4N31  4N31V  4N32  4N32V  4N33  
4N29A PDF
Toshiba
Toshiba
4N29A PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
other parts : 4N29  4N30  4N31  4N32  4N32A  4N33  
4N29A PDF
Motorola
Motorola => Freescale
4N29AV 6-Pin DIP Optoisolators Darlington Output

The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.
This series is designed for use in applications requiring high collector output currents at lower input currents.

• Higher Sensitivity to Low Input Drive Current
• Meets or Exceeds All JEDEC Registered Specifications
• To order devices that are tested and marked per VDE 0884


other parts : 4N29  4N29A  4N29V  4N30  4N30V  4N31  4N31V  4N32  4N32V  4N33  
4N29AV PDF

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