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4N30

  

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Match, Like 4N30 4N30G 4N30M 4N30S 4N30V 4N30W
Start with 4N30-* 4N303* 4N30G* 4N30L* 4N30M* 4N30S* 4N30T* 4N30V* 4N30W*
End *44N30 *14N30 *K4N30
Included *04N30* *14N30* *84N30*

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QT
QT Optoelectronics => Fairchildsemi
4N30 GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.


other parts : 4N29  4N29300  4N29300W  4N293S  4N293SD  4N29S  4N29SD  4N29W  4N30300  4N30300W  
4N30 PDF
UTC
Unisonic Technologies
4N30 4A, 300V N-CHANNEL POWER MOSFET

■ DESCRIPTION
The UTC 4N30 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance.

■ FEATURES
* RDS(ON)<2Ω @ VGS=10V, ID=4A
* High switching speed
* Typically 3.2nC low gate charge
* 100% avalanche tested

 


other parts : 4N30G-TN3-R  4N30G-TN3-T  4N30L-TN3-R  4N30L-TN3-T  
4N30 PDF
Motorola
Motorola => Freescale
4N30 6-Pin DIP Optoisolators Darlington Output

The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.
This series is designed for use in applications requiring high collector output currents at lower input currents.

• Higher Sensitivity to Low Input Drive Current
• Meets or Exceeds All JEDEC Registered Specifications
• To order devices that are tested and marked per VDE 0884


other parts : 4N29  4N29A  4N29AV  4N29V  4N30V  4N31  4N31V  4N32  4N32V  4N33  
4N30 PDF
Everlight
EVERLIGHT
4N30 6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description
The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector.
They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.


other parts : 4N29  4N29-V  4N29M  4N29M-V  4N29MTA  4N29MTA-V  4N29MTB  4N29MTB-V  4N29S  4N29S-V  
4N30 PDF
NJSEMI
New Jersey Semiconductor
4N30 Photon Coupled Isolator

FEATURES:
• High DC current transfer ratio
• High isolation resistance
• 2500 volts isolation voltage
• I/O compatible with integrated circuits


other parts : 4N29  4N29A  4N31  4N32  4N32A  4N33  
4N30 PDF
Toshiba
Toshiba
4N30 PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
other parts : 4N29  4N29A  4N31  4N32  4N32A  4N33  
4N30 PDF
Fairchild
Fairchild Semiconductor
4N30 GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.


FEATURES
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option
-add option .300. (e.g., 4N29.300)


other parts : 4N29  4N29.300  4N29.300W  4N29.3S  4N29.3SD  4N29.S  4N29.SD  4N29.W  4N31  4N31.300  
4N30 PDF
Isocom
Isocom
4N30 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT

DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 series of
optically coupled isolators consist of an infrared
light emitting diode and NPN silicon
photodarlington in a space efficient dual in line
plastic package.


other parts : 4N29  4N29G  4N29SM  4N30G  4N30SM  4N31  4N31G  4N31SM  4N32  4N32G  
4N30 PDF
Motorola
Motorola => Freescale
4N30V 6-Pin DIP Optoisolators Darlington Output

The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.
This series is designed for use in applications requiring high collector output currents at lower input currents.

• Higher Sensitivity to Low Input Drive Current
• Meets or Exceeds All JEDEC Registered Specifications
• To order devices that are tested and marked per VDE 0884


other parts : 4N29  4N29A  4N29AV  4N29V  4N30  4N31  4N31V  4N32  4N32V  4N33  
4N30V PDF
Everlight
EVERLIGHT
4N30S 6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description
The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector.
They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.


other parts : 4N29  4N29-V  4N29M  4N29M-V  4N29MTA  4N29MTA-V  4N29MTB  4N29MTB-V  4N29S  4N29S-V  
4N30S PDF
Fairchild
Fairchild Semiconductor
4N30M General Purpose 6-Pin Photodarlington Optocoupler

Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.


other parts : 4N29M  4N29SM  4N29SR2M  4N29SR2VM  4N29SVM  4N29TM  4N29TVM  4N29VM  4N30SM  4N30SR2M  
4N30M PDF
QT
QT Optoelectronics => Fairchildsemi
4N30W GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.


other parts : 4N29  4N29300  4N29300W  4N293S  4N293SD  4N29S  4N29SD  4N29W  4N30  4N30300  
4N30W PDF

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