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HM-6514

  

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HM-6514 1024 x 4 CMOS RAM

Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation.
On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays.
Gated inputs allow lower operating current and also eliminate the need for


other parts : 24502BVA  8102402VA  8102404VA  8102406VA  HM-6514/883  HM1-6514-9  HM1-6514B-9  HM1-6514S-9  HM3-6514-9  HM3-6514B-9  
HM-6514 PDF
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HM-6514/883 1024 x 4 CMOS RAM

Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation.
On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays.
Gated inputs allow lower operating current and also eliminate the need for


other parts : 24502BVA  8102402VA  8102404VA  8102406VA  HM-6514  HM1-6514-9  HM1-6514B-9  HM1-6514S-9  HM3-6514-9  HM3-6514B-9  
HM-6514/883 PDF

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