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IRFD1Z1

  

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IRFD1Z1 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits. Formerly developmental type TA17451.


other parts : IRFD1Z0  IRFD1Z2  IRFD1Z3  
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