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ISB35000

  

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ST-Microelectronics
STMicroelectronics
ISB35000 HCMOS STRUCTURED ARRAY

GENERAL DESCRIPTION
The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equivalent usable gates. The array operates over a Vdd voltage range of 2.7 to 3.6 volts.
The I/O count for this array family ranges to over 600 signals and 1000 pins dependent upon the package


other parts : ISB35000SERIES  ISB35666  ISB35832  ISB35083  ISB35130  ISB35166  ISB35208  ISB35279  ISB35389  ISB35484  
ISB35000 PDF
ST-Microelectronics
STMicroelectronics
ISB35000SERIES HCMOS STRUCTURED ARRAY

GENERAL DESCRIPTION
The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equivalent usable gates. The array operates over a Vdd voltage range of 2.7 to 3.6 volts.
The I/O count for this array family ranges to over 600 signals and 1000 pins dependent upon the package


other parts : ISB35666  ISB35000  ISB35832  ISB35083  ISB35130  ISB35166  ISB35208  ISB35279  ISB35389  ISB35484  
ISB35000SERIES PDF

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