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K2611

  

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K2611 Silicon N-Channel MOSFET / 2SK2611 TO-247 Package

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

K2611 PDF
Toshiba
Toshiba
K2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

DC−DC Converter, Relay Drive and Motor Drive Applications

1. Low drain−source ON-resistance  : RDS (ON)= 1.2 Ω(typ.)

2. High forward transfer admittance  : |Yfs| =7.0 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement−mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)


other parts : 2SK2611T  
K2611 PDF
ETC
Unspecified
K2611B Silicon N-Channel MOSFET

[WINSEMI MICROELECTRONICS]

General Description
This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 72nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)

K2611B PDF

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