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M29F010B120K3

  

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ST-Microelectronics
STMicroelectronics
M29F010B120K3 1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory

SUMMARY DESCRIPTION
The M29F010B is a 1 Mbit (128Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ACCESS TIME: 45ns
■PROGRAMMING TIME
–8µs per Byte typical
■8 UNIFORM 16 Kbytes MEMORY BLOCKS
■PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■LOW POWER CONSUMPTION
– Standby and Automatic Standby
■100,000 PROGRAM/ERASE CYCLES per BLOCK
■20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ELECTRONIC SIGNATURE
– Manufacturer Code: 20h


other parts : M29F010B  M29F010B120K1  M29F010B120K1T  M29F010B120K3T  M29F010B120K6  M29F010B120K6T  M29F010B120N1  M29F010B120N1T  M29F010B120N3  M29F010B120N3T  
M29F010B120K3 PDF
ST-Microelectronics
STMicroelectronics
M29F010B120K3T 1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory

SUMMARY DESCRIPTION
The M29F010B is a 1 Mbit (128Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ACCESS TIME: 45ns
■PROGRAMMING TIME
–8µs per Byte typical
■8 UNIFORM 16 Kbytes MEMORY BLOCKS
■PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■LOW POWER CONSUMPTION
– Standby and Automatic Standby
■100,000 PROGRAM/ERASE CYCLES per BLOCK
■20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ELECTRONIC SIGNATURE
– Manufacturer Code: 20h


other parts : M29F010B  M29F010B120K1  M29F010B120K1T  M29F010B120K3  M29F010B120K6  M29F010B120K6T  M29F010B120N1  M29F010B120N1T  M29F010B120N3  M29F010B120N3T  
M29F010B120K3T PDF

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