datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Number :
Home  >>>  M29F100BB120M1T Datasheet

M29F100BB120M1T

  

Datasheet PDF

Match, Like M29F100BB120M1T
Start with N/A
End N/A
Included N/A
View Details    
Manufacturer Part no Description View
ST-Microelectronics
STMicroelectronics
M29F100BB120M1T 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory

SUMMARY DESCRIPTION
The M29F100B is a 1 Mbit (128Kb x8 or 64Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F100B is fully backward compatible with the M29F100.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

■ SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 45ns
■ PROGRAMMING TIME
   – 8µs per Byte/Word typical
■ 5 MEMORY BLOCKS
   – 1 Boot Block (Top or Bottom Location)
   – 2 Parameter and 2 Main Blocks
■ PROGRAM/ERASE CONTROLLER
   – Embedded Byte/Word Program algorithm
   – Embedded Multi-Block/Chip Erase algorithm
   – Status Register Polling and Toggle Bits
   – Ready/Busy Output Pin
■ ERASE SUSPEND and RESUME MODES
   – Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
   – Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ LOW POWER CONSUMPTION
   – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
   – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 0020h
   – Top Device Code M29F100BT: 00D0h
   – Bottom Device Code M29F100BB: 00D1h


other parts : M29F100BB  M29F100BB120M1  M29F100BB120M3  M29F100BB120M3T  M29F100BB120M6  M29F100BB120M6T  M29F100BB120N1  M29F100BB120N1T  M29F100BB120N3  M29F100BB120N3T  
M29F100BB120M1T PDF
ST-Microelectronics
STMicroelectronics
M29F100BB120M1T_1999 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory

SUMMARY DESCRIPTION
The M29F100B is a 1 Mbit (128Kb x8 or 64Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F100B is fully backward compatible with the M29F100.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

■ SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 45ns
■ PROGRAMMING TIME
   – 8µs per Byte/Word typical
■ 5 MEMORY BLOCKS
   – 1 Boot Block (Top or Bottom Location)
   – 2 Parameter and 2 Main Blocks
■ PROGRAM/ERASE CONTROLLER
   – Embedded Byte/Word Program algorithm
   – Embedded Multi-Block/Chip Erase algorithm
   – Status Register Polling and Toggle Bits
   – Ready/Busy Output Pin
■ ERASE SUSPEND and RESUME MODES
   – Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
   – Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ LOW POWER CONSUMPTION
   – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
   – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 0020h
   – Top Device Code M29F100BT: 00D0h
   – Bottom Device Code M29F100BB: 00D1h


other parts : M29F100BB_1999  M29F100BB120M1_1999  M29F100BB120M3_1999  M29F100BB120M3T_1999  M29F100BB120M6_1999  M29F100BB120M6T_1999  M29F100BB120N1_1999  M29F100BB120N1T_1999  M29F100BB120N3_1999  M29F100BB120N3T_1999  
M29F100BB120M1T PDF

1

New and Popular Datasheet

LM317  PN2222A  1N4007  LM324N  CDB5505  CS5342_06  CDB5343  CS4362A_08  CS4362A_09  WM8804_09  PS2502  PS2501-1  HPR100  NKE0505S  MC74HC7266  5082-761X  BP3106  BDW73  BCM84728  BC337  2N7002  TIP120  2N5883  TIC206D  WM8960  WM8804  TIC126  80C652  BP2833D  CDB5341  NMH0515DC  U1160  BT8375  BD239  2SC5801  2N7002  2N2218A  1N5386B  BCM4330  MX29LV320EBTI-70G  TAP107M016HSB  CPS057  AMM20B  VSK-S3  TAJC106M016R  P80C652EBA  MC74HC7266AD  MA3D798  LB124E  DS1302SN  DC9018  CS5506_09  CS4362A-EQZ  BF200  TDA2030A  Part List  Manufacturers List 


Key Word
System  Voltage  Analog  Audio  Axial  Battery  Bipolar  Bridge  Camera  Chip  Clock  Color  Connector  Control  Controller  Converter  Counter  Crystal  Decoder  Digital 

@ 2014 - 2018  [ Home ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]