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ETC
Unspecified
RFP6P10 P-Channel Enhancement-Mode Power Field-Effect Transistors

[G E SOLID STATE]


other parts : RFM6P08  RFM6P10  RFP6P08  
RFP6P10 PDF
Intersil
Intersil
RFP6P10 -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors.
Formerly developmental type TA09046.

Features
• -6A, -80V and -100V
• rDS(ON) = 0.600Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer


other parts : RFP6P08  
RFP6P10 PDF

1

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